Method for manufacturing high efficiency photovoltaic...

Details Method for manufacturing high efficiency photovoltaic... Method for manufacturing high efficiency photovoltaic...

H - Electricity

01

L

H01L 31/18 (2006.01) H01L 21/00 (2006.01) H01L 31/06 (2006.01)

Patent

CA 2409265

A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer (12a) which is closest to the interface between the intrinsic layer and P doped layer (14), which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the intrinsic layer is deposited.

Selon l'invention, un dispositif photovoltaïque de type P-I-N est fabriqué par un procédé par lequel le taux de dépôt de la couche intrinsèque est régulé de sorte qu'une partie de cette couche intrinsèque (12a) (qui est la plus proche de l'interface entre la couche intrinsèque et la couche P dopée (14) comprenant au moins 10 % de l'épaisseur de la couche intrinsèque) est déposée à un taux inférieure au taux moyen auquel l'ensemble de la couche intrinsèque est déposé.

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