Method for manufacturing optically triggered lateral thyristor

Details Method for manufacturing optically triggered lateral thyristor Method for manufacturing optically triggered lateral thyristor

H - Electricity

01

L

345/24

H01L 31/111 (2006.01)

Patent

CA 2036573

A method for manufacturing an optically triggered lateral thyristor is to form an anode region by providing a first opening in an insulating layer formed on a semiconductor substrate, a diffusion layer by providing a second opening in the insulating layer to be spaced from the anode region, a base-forming region by providing a third opening in the insulating layer externally adjacent to the second opening, and a base region and simultaneously a cathode region by means of double diffusion through the third opening, the base region having a lateral width determined by a diffusion difference between the base and cathode regions for effective minimization of the width.

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