H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/105 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2088800
A method for manufacturing semiconductor light-receiving elements comprising forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate. A p-type layer is formed in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer. Finally, the n-InP substrate on which the p-type layer has been formed is separated into semiconductor light- receiving elements.
Iguchi Yasuhiro
Iwasaki Takashi
Yamabayashi Naoyuki
Kirby Eades Gale Baker
Sumitomo Electric Industries Ltd.
LandOfFree
Method for manufacturing semiconductor light-receiving elements does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor light-receiving elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor light-receiving elements will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1661782