Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

H - Electricity

01

L

H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/265 (2006.01) H01L 21/336 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2757205

A combined substrate (80P) is prepared which has a supporting portion (30) and first and second silicon carbide substrates (11, 12). Between the first and second silicon carbide substrates (11, 12), a gap (GP) having an opening (CR) exists. A closing layer for the gap (GP) is formed over the opening (CR). The closing layer at least includes a silicon layer. In order to form a cover (70) made of silicon carbide and closing the gap (GP) over the opening (CR), the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces (S1, S2) of the first and second silicon carbide substrates (11, 12) onto the cover (70), a connecting portion is formed to close the opening (CR). The cover (70) is removed.

Dans le procédé selon l'invention pour la fabrication d'un substrat semi-conducteur, un substrat composite (80P) qui comporte une section de support (30) et des premier et second substrats de carbure de silicium (11, 12) est préparé. Il existe un espace (GP) avec une ouverture (CR) entre les premier et second substrats de carbure de silicium (11, 12). Une couche d'obturation pour l'espace (GP) est formée au-dessus de l'ouverture (CR). La couche d'obturation comprend une couche de silicium, au moins. La couche de silicium est carbonisée pour former un couvercle (70) comprenant du carbure de silicium qui obture l'espace (GP) au-dessus de l'ouverture (CR). Le dépôt d'un sublimé depuis des première et seconde surfaces latérales respectives (S1, S2) des premier et second substrats de carbure de silicium (11, 12) sur le couvercle (70) forme une partie de jonction qui obture l'ouverture (CR). Le couvercle (70) est ensuite retiré.

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