Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

H - Electricity

01

L

H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/265 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2757786

A combined substrate is prepared which has a supporting portion (30) and first and second silicon carbide substrates (11, 12) The first silicon carbide substrate (11) has a first front-side surface and a first side surface (S1) The second silicon carbide substrate has a second front-side surface and a second side surface (S2) The second side surface (S2) is disposed such that a gap having an opening between the first and second front-side surfaces (F1, F2) is formed between the first side surface (S1) and the second side surface (S2) By introducing melted silicon from the opening into the gap, a silicon connecting portion (BDp) is formed to connect the first and second side surfaces (S1, S2) so as to close the opening By carbonizing the silicon connecting portion (BDp), a silicon carbide connecting portion (BDa) is formed

Dans le procédé selon l'invention pour la fabrication d'un substrat semi-conducteur, un substrat composite qui comporte une section de support (30) et des premier et second substrats de carbure de silicium (11, 12) est préparé. Le premier substrat de carbure de silicium (11) comporte une première surface supérieure et une première surface latérale (S1). Le second substrat de carbure de silicium comporte une seconde surface supérieure et une seconde surface latérale (S2). La seconde surface latérale (S2) est disposée de telle sorte qu'un espace qui comporte une ouverture entre les première et seconde surfaces supérieures (F1, F2) est formé entre les première et seconde surfaces latérales (S1, S2). L'introduction de silicium fondu dans l'espace via l'ouverture forme une partie de jonction en silicium (BDp) qui connecte les première et seconde surfaces latérales (S1, S2) de façon à obturer l'ouverture. En carbonisant la partie de jonction en silicium (BDp), une partie de jonction en carbure de silicium (BDa) est formée.

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