Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

H - Electricity

01

L

H01L 21/02 (2006.01) C30B 29/36 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2735975

A first silicon carbide substrate (11) having a first back surface (B1) and a second silicon carbide substrate (12) having a second back surface (B2) are prepared. The first and second silicon carbide substrates (11, 12) are arranged so that the first and second back surfaces (B1, B2) are exposed in one direction. A bonding part (50) for connecting the first and second back surfaces (B1, B2) with each other is formed. The process for forming the bonding part (50) includes a step wherein a growth layer (30), which is formed from silicon carbide, is formed on the first and second back surfaces (B1, B2) by a sublimation method in which a sublimation product is supplied from the direction.

Selon l'invention, un premier substrat en carbure de silicium (11) ayant une première surface arrière (B1) et un second substrat en carbure de silicium (12) ayant une seconde surface arrière (B2) sont préparés. Les premier et second substrats en carbure de silicium (11, 12) sont agencés de telle manière que les première et seconde surfaces arrière (B1, B2) sont exposées dans une même direction. Une partie de liaison (50) destinée à raccorder les première et seconde surfaces arrière (B1, B2) l'une à l'autre est formée. Le processus de formation de la partie de liaison (50) comprend une étape à laquelle une couche de croissance (30), qui est faite de carbure de silicium, est formée sur les première et seconde surfaces arrière (B1, B2) par un procédé de sublimation dans lequel un produit de sublimation est amené depuis la direction.

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