Method for manufacturing semiconductor substrate

Details Method for manufacturing semiconductor substrate Method for manufacturing semiconductor substrate

H - Electricity

01

L

H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/203 (2006.01) H01L 21/265 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2757200

In the provided method for manufacturing a semiconductor substrate, a first silicon carbide substrate (11) has a first top surface (F1) and a first lateral surface. A second silicon carbide substrate (12) has a second top surface (F2) and a second lateral surface. The second lateral surface is disposed such that a gap, which has an opening between the respective first and second top surfaces (F1, F2) of the first and second silicon carbide substrates (11, 12), is formed between the first and second lateral surfaces. A plug part (70) that plugs the gap is provided above the opening. Depositing a sublimate from the first and second lateral surfaces onto the plug part (70) forms a joining part (BDa) that connects the first and second lateral surfaces so as to plug up the opening. After the step in which the joining part (BDa) is formed, the plug part (70) is removed.

Dans le procédé de fabrication selon l'invention d'un substrat semi-conducteur, un premier substrat de carbure de silicium (11) comporte une première surface supérieure (F1) et une première surface latérale. Un second substrat de carbure de silicium (12) comporte une seconde surface supérieure (F2) et une seconde surface latérale. La seconde surface latérale est disposée de telle sorte qu'un espace qui comporte une ouverture entre les première et seconde surfaces supérieures respectives (F1, F2) des premier et second substrats de carbure de silicium (11, 12) est formé entre les première et seconde surfaces latérales. Une partie d'obturation (70) qui bouche l'espace est disposée au-dessus de l'ouverture. Le dépôt d'un sublimé depuis les première et seconde surfaces latérales sur la partie d'obturation (70) forme une partie de jonction (BDa) qui connecte les première et seconde surfaces latérales de manière à boucher l'ouverture. Après l'étape dans laquelle la partie de jonction (BDa) est formée, la partie d'obturation (70) est retirée.

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