C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/36 (2006.01) C30B 33/06 (2006.01)
Patent
CA 2759074
At least one single crystal substrate (11), each having a backside surface (B1) and made of silicon carbide, and a supporting portion (30) having a main surface (FO) and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface (B1) and main surface (FO) is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface (B1) and main surface (FO). The surface layer is removed at least partially. Following this removing step, the backside surface (B1) and main surface (FO) are connected to each other.
La présente invention concerne un procédé permettant d'élaborer au moins un substrat monocristallin (11) en carbure de silicium et chacun de tels substrats monocristallins comportant une face postérieure (B1) et une partie support (30) en carbure de silicium comportant une face antérieure (F0). Pendant cette élaboration, la face postérieure (B1) et/ou de la face antérieure (F0) sont formées par usinage mécanique. Ce procédé de formation permet de former une couche superficielle présentant des déformations affectant la structure cristalline sur l'une au moins de la face postérieure (B1) ou de la face antérieure (F0). Une partie au moins de la couche superficielle est enlevée. Après cet enlèvement, les faces postérieures (B1) et la face antérieure (F0) sont réunies.
Fujiwara Shinsuke
Harada Shin
Inoue Hiroki
Namikawa Yasuo
Nishiguchi Taro
Marks & Clerk
Sumitomo Electric Industries Ltd.
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