H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/02 (2006.01) C30B 29/36 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2759852
A method for manufacturing a silicon carbide substrate having a large diameter provided readily includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; and connecting end surfaces of the plurality of SiC substrates to one another such that the plurality of SiC substrates are arranged side by side when viewed in a planar view.
L'invention concerne un procédé de production d'un substrat (1) en carbure de silicium caractérisé en ce que son diamètre peut être aisément agrandi, le procédé de production faisant intervenir un processus consistant à préparer une pluralité de substrats (20) en SiC comprenant du carbure de silicium monocristallin, et un processus consistant à relier entre elles les surfaces (20B) d'extrémité de la pluralité de substrats (20) en SiC de telle manière que ladite pluralité de substrats (20) en SiC soient disposés côte à côte dans une vue en plan.
Harada Shin
Namikawa Yasuo
Nishiguchi Taro
Sasaki Makoto
Tamaso Hideto
Marks & Clerk
Sumitomo Electric Industries Ltd.
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