C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
204/86.6
C23F 1/02 (2006.01) C25F 3/14 (2006.01) H01L 21/3213 (2006.01)
Patent
CA 1171381
Abstract A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the etching rate in the base of electrochemical machining by a factor of 103 to 104. Such enhancement is sufficient to make masking unnecessary.
347879
Melcher Robert L.
Romankiw Lubomyr T.
von Gutfeld Robert J.
Gowling Lafleur Henderson Llp
International Business Machines Corporation
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