G - Physics – 01 – B
Patent
G - Physics
01
B
G01B 11/06 (2006.01) H01L 21/66 (2006.01)
Patent
CA 2228605
In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500cm-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.
Méthode de mesure de l'épaisseur d'un film épitaxial de plaquette épitaxiale multicouche consistant à mesurer le spectre de réflectivité d'une plaquette épitaxiale multicouche constituée d'au moins deux couches épitaxiales de caractéristiques électriques différentes au moyen d'un rayonnement infrarouge lointain d'au moins 500 cm-1. On procède à une analyse de fréquence sur le spectre de réflexion ainsi obtenu d'après une méthode d'entropie maximale. L'épaisseur du film de chaque couche épitaxiale est calculée d'après le spectre d'analyse ainsi obtenu.
Abe Toshio
Akai Kenji
Iwata Katsuyuki
Shirai Hiroshi
Tojima Chikara
Riches Mckenzie & Herbert Llp
Toshiba Ceramics Co. Ltd.
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