Method for mirror passivation of semiconductor laser diodes

Details Method for mirror passivation of semiconductor laser diodes Method for mirror passivation of semiconductor laser diodes

H - Electricity

01

S

345/32, 113/88

H01S 3/06 (2006.01) H01S 5/028 (2006.01) H01S 5/02 (2006.01)

Patent

CA 2018501

A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

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