Method for modifying insulating or semi-conductive surfaces,...

C - Chemistry – Metallurgy – 08 – J

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C08J 7/12 (2006.01) H01L 21/30 (2006.01)

Patent

CA 2627222

The invention concerns the use of a diazonium salt R-N2 + bearing an aromatic group R, for grafting said aromatic group onto insulating, semi-conductive, surfaces made of binary or ternary compounds or composite materials, said diazonium salt being present at a concentration close to its solubility limit, in particular at a concentration higher than 0.05 M, and ranging preferably between about 0.5 M and about 4M.

La présente invention l'utilisation d'un sel de diazonium R-N2 + portant un groupe aromatique R, pour le greffage dudit groupe aromatique sur des surfaces isolantes, semi-conductrices, de composés binaires ou ternaires ou de matériaux composites, ledit sel de diazonium étant présent à une concentration proche de sa limite de solubilité, notamment à une concentration supérieure à 0,05 M, et variant de préférence d'environ 0,5 M à environ 4 M.

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