Method for monitoring of a buffing process

Details Method for monitoring of a buffing process Method for monitoring of a buffing process

G - Physics

01

N

G01N 21/21 (2006.01)

Patent

CA 2210739

A method for the monitoring and/or evaluation of buffing of an alignment layer of a liquid crystal. The method comprises buffing said alignment layer and monitoring said buffing using spectroscopic ellipsometric analysis at at least one location on said alignment layer and at at least one orientation of said alignment layer. Preferably, the monitoring comprises determination of optical anisotropy of the alignment layer.

Méthode de contrôle et/ou d'évaluation du polissage d'une couche d'alignement d'un dispositif à cristaux liquides. La méthode consiste à polir la couche d'alignement et à contrôler ce polissage en utilisant l'analyse au moyen d'un spectroscope et d'un ellipsomètre en au moins un point de la couche d'alignement et dans au moins une orientation de la couche d'alignement. De préférence, le contrôle comprend la détermination de l'anisotropie optique de la couche d'alignement.

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