H - Electricity – 01 – L
Patent
H - Electricity
01
L
343/23, 148/3.1
H01L 45/00 (2006.01) C23C 14/00 (2006.01) C23C 14/06 (2006.01) C23C 14/32 (2006.01) C23C 16/22 (2006.01) H01L 29/16 (2006.01) H01L 31/0376 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01) C23C 16/44 (2006.01)
Patent
CA 1192818
ABSTRACT The production of improved photoresponsive amorphous alloys (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) and devices (142, 168, 178, 192, 198, 212), such as photovoltaic, photoreceptive devices and the like; having im- proved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) and devices (142, 168, 178, 192, 198, 212). The ad- justing element or elements are added at least to the active photoresponsive regions (150, 170, 172, 180, 186, 194, 208, 216) of amorphous de- vices (142, 168, 178, 192, 198, 212) containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) by vapor deposition, sputtering or glow dis- charge decomposition. The addition of fluorine bonding and electronegativity to the alloy (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) acts as a compensating or altering element to reduce the density of states in the energy gap thereof. The fluorine bond strength allows the adjusting element(s) to be added to the alloy (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) to adjust the band gap without reducing the electronic qualities of the alloy (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220). Hydrogen also acts as a compen- sating or altering element to complement fluorine when utilized therewith. The compensating or altering element(s) can be added during dep- osition of the alloy (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) or following deposition. The addition of the adjusting ele- ment(s) to the alloys (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) adjusts the band gap to a selected optimum wavelength thresh- old for a particular device (142, 168, 178, 192, 198, 212) to increase the photoabsorption effi- ciency to enhance the device's photoresponsive- ness without adding states in the gap which de- crease the efficiency of the devices (142, 168, 178, 192, 198, 212). The adjusting element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the alloys (118, 146, 168, 180, 194, 206, 208, 210, 214, 216, 218, 220) and devices (142, 168, 178, 192, 198, 212).
385391
Izu Masatsugu
Ovshinsky Stanford R.
Energy Conversion Devices Inc.
Macrae & Co.
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