Method for passivating an undercut in semiconductor device...

Details Method for passivating an undercut in semiconductor device... Method for passivating an undercut in semiconductor device...

H - Electricity

01

L

356/136

H01L 21/425 (2006.01) H01L 21/033 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1238118

Abstract of the Disclosure A method, useful in fabricating semiconductor integrated circuits, for passivating an undercut formed by etch-back of a silicon dioxide layer under a diverse insulator film is disclosed. The method includes the step of coating the device with a thin, conformal film to a thickness sufficient only to line, without refilling, the lateral walls of the undercut region.

501735

Affiliated with

Also associated with

Rating

Method for passivating an undercut in semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for passivating an undercut in semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for passivating an undercut in semiconductor device... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1282871