G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/01 (2006.01) G02F 1/19 (2006.01)
Patent
CA 2513658
A phase transition method of an organic based complex ensuring high- performance phase transition under characteristic conditions, and its functional element. When an EDO-TTF based complex crystal is irradiated with photons as weak as 1-10 µ J per square centimeter, the EDO-TTF based complex crystal makes a transition to a metal phase (high temperature phase) and an insulator phase (low temperature phase). High-sensitivity, high-rate, room-temperature operation is realized in the wavelength region of 1.5-0.8 µm by varying reflection spectrum and electric conductivity.
L'invention concerne un procédé de transition de phase d'un complexe organique garantissant une transition de phase haute performance dans des conditions caractéristiques, ainsi que son élément fonctionnel. Lorsqu'un cristal complexe à base d'EDO-TTF est exposé à un faisceau de photons de 1 à 10 µJ/cm?2¿, le cristal complexe à base d'EDO-TTF passe à une phase métallique (phase haute température) et à une phase isolante (phase basse température). Une opération a température ambiante à haut débit et de haute sensibilité est réalisée dans la plage de longueur d'onde comprise entre 1,5 et 0,8 µm par variation du spectre de réflexion et de la conductivité électrique.
Fukaya Soichi
Ishikawa Tadahiko
Koshihara Shinya
Ota Akira
Saito Gunji
Japan Science And Technology Agency
Riches Mckenzie & Herbert Llp
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