C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/26 (2006.01) C23C 16/27 (2006.01) C23C 16/458 (2006.01) C23C 16/50 (2006.01)
Patent
CA 2043277
ABSTRACT OF THE DISCLOSURE In forming a diamond film on a surface of substrate by means of plasma method, there is employed in a plasma reacting chamber a supporting member having a top surface for placing the substrate so disposed as to be smaller than a bottom surface of the substrate and having engagement means for engaging with the substrate. When the substrate, particularly substrate for a cutting tool, placed on the top surface of the supporting member is brought into contact with plasma obtainable by exciting raw materials gases, diamond film is coated on the face, land and flank of the substrate for the cutting tool in a uniform film thickness.
Idemitsu Petrochemical Company Limited
Marks & Clerk
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