C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/81, 148/2.1,
C23C 16/02 (2006.01) C23C 16/30 (2006.01) G02B 13/16 (2006.01)
Patent
CA 2027657
An improved method of forming a ZnS layer on a Znse substrate by chemical vapor deposition of ZnS onto the ZnSe is disclosed in which the ZnS is contacted, prior to the chemical vapor deposition of the ZnS, with H2S in the absence of zinc metal vapor to cause reaction of the H2S and the surface of the ZnSe substrate.
On divulgue une méthode améliorée pour former une couche de ZnS sur un substrat de ZnSe par dépôt chimique en phase vapeur de ZnS sur le ZnSe dans laquelle le ZnS est mis en contact, avant le dépôt chimique en phase vapeur du ZnS, avec du H2S en l'absence de vapeur de zinc métallique pour provoquer la réaction entre le H2S et la surface du substrat de ZnSe.
Kirsch Jeffery L.
Macdonald James C.
Purohit Paul V.
Cvd Inc.
Gowling Lafleur Henderson Llp
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