Method for preparing single-crystal znse

Details Method for preparing single-crystal znse Method for preparing single-crystal znse

C - Chemistry, Metallurgy

30

B

148/3.6

C30B 25/02 (2006.01) C30B 1/02 (2006.01) C30B 29/48 (2006.01)

Patent

CA 1321124

SO2-4876OHC/YU/88 ABSTRACT OF THE DISCLOSURE A method for preparing single-crystal ZnSe comprising the steps of: working polycrystalline ZnSe into a rod-shaped starting material; placing the starting material in a reaction vessel; filling the atmosphere of the reaction vessel with an inert gas, nitrogen, H2Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; and converting the polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving the reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T1 in the range of from about room temperature to about 100°C, a temperature increasing zone BC having a temperature gradient of from about 50 to about 200°C/cm, a hot zone CD having a temperature T2 in the range of from about 700 to about 900°C, a temperature decreasing zone DE having a temperature gradient of from about -200 to about -50°C/cm, and a cool zone EF having a temperature T1 in the range of from about room temperature to about 100°C.

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