Method for processing the surface of a wafer for producing a...

Details Method for processing the surface of a wafer for producing a... Method for processing the surface of a wafer for producing a...

H - Electricity

01

L

H01L 31/18 (2006.01)

Patent

CA 2744924

In a method for the treatment of the surface of a wafer for producing a solar cell, onto which wafer an antireflection and passivation layer has been applied onto a p-doped layer in a step preceding the method, prior to a subsequent metallization on the surface of the wafer for producing contacts for the solar cell, the surface is treated in a processing step. This is for passivation or for removal of the p-doped layer in the region of disturbances such as scratches, defect sites, pinholes and inhomogeneous regions in the antireflection and passivation layer. It is thus possible to avoid metal depositions at these disturbances.

L'invention concerne un procédé pour traiter la surface d'une plaquette (11) utilisée pour produire une cellule photovoltaïque, une couche de passivation et anti-reflet (16) ayant été appliquée sur une couche à dopage de type p (14) sur la plaquette, lors d'une étape antérieure au procédé. Ledit procédé implique le traitement de la surface dans une étape d'usinage avant la métallisation à la surface de la plaquette, ce qui permet de produire des contacts pour la cellule photovoltaïque. Cela sert à la passivation et à l'élimination de la couche à dopage de type p (14) dans une région de perturbations (18) telles que des rayures, des points défectueux, des piqûres, et des régions non homogènes dans la couche de passivation et antireflet (16). De ce fait, il est également possible d'éviter les dépôts métalliques sur lesdites perturbations.

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