C - Chemistry – Metallurgy – 25 – F
Patent
C - Chemistry, Metallurgy
25
F
C25F 3/12 (2006.01) B01J 8/00 (2006.01) B01J 8/24 (2006.01) B01J 19/00 (2006.01) B81B 1/00 (2006.01) H01L 21/3063 (2006.01)
Patent
CA 2297077
The invention relates to a method for producing a filter having very fine through holes. In this method, a blank (1), made of a weakly doped n- or p- type corrodible semi-conducting material, for example monocrystalline silicon, is connected either as an anode or cathode, depending on the doping. Said blank is electrochemically etched in an etching solution until through holes (2) form. To this end, a holding element (3) is fixed to the blank (1). The holding element (3) borders the surface of the blank (1) which is moistened with etching fluid, i.e. the filter surface that is to be produced. In this way, through holes are obtained with a diameter of as little as 1 to 2 nm, depending on the concentration of doping agent.
L'invention concerne un procédé de production de filtres présentant des trous de passage très fins. Selon ce procédé, on connecte, comme anode ou cathode selon le dopage, une ébauche (1) en matériau semi-conducteur faiblement dopé n ou p attaquable, comme par exemple du silicium monocristallin, et on la soumet à une attaque électrochimique dans une solution corrosive jusqu'à formation de trous de passage (2). A cet effet, on fixe à l'ébauche (1) un élément de maintien (3) qui borde la surface de l'ébauche (1) mouillée avec le liquide d'attaque, c'est-à-dire la surface de filtre à produire. On obtient, selon la concentration en matière de dopage, des trous de passage dont le diamètre peut ne pas excéder 1 à 2 nm.
Hofmann Wilfried
Scheybani Tschangiz
N. F. T. Nanofiltertechnik Gesellschaft Mit Beschrankter Haftung
Ridout & Maybee Llp
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