Method for producing a layer of crystalline silicon

Details Method for producing a layer of crystalline silicon Method for producing a layer of crystalline silicon

H - Electricity

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356/196, 345/23

H01L 31/04 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01) H01L 21/203 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1087718

METHOD FOR PRODUCING A LAYER OF CRYSTALLINE SILICON Abstract of the Disclosure Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. The product is useful in semiconductor and solar cell applications.

285826

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