Method for producing a misfet and a misfet produced thereby

Details Method for producing a misfet and a misfet produced thereby Method for producing a misfet and a misfet produced thereby

H - Electricity

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356/149

H01L 21/308 (2006.01) H01L 21/28 (2006.01) H01L 21/306 (2006.01) H01L 21/336 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1188822

SPECIFICATION BE IT KNOW, that We TIMOTHY WILLIAM JAMES resident of 83 Columbia Drive, Worcester, Worcestershire, England, and JOHN CHARLES WHITE RESIDENT OF 70 Tennyson Drive, Malvern, Worcestershire, England, having made an invention entitled A METHOD FOR PRODUCING A MISFET the following disclosure contains a correct and full descrip- tion of the invention and of the best mode known to the inventor of taking advantage of the same: ABSTRACT OF THE DISCLOSURE A method for producing a MISF having, a gate electrode formed at the base of a grooved recess. The grooved recess if formed with steep side-walls (eg be reactive ion etching ion beam milling or by using an orientation etchant) and gate and source and drain contacts are formed by the simultaneous deposition of conductive material (eg metal evaporated from a point source.) Steepness of the side-walls of the recess ensures separation of the conductive material, isolating the gate electrode from the remaining conductive material providing the source and drain contacts. A silicon MISFET may be produced, using a diazine catalysed ethylenediamine-pyrocatechol-water solution etchant, and exposing the(110) crystal plane face of the silicon to the etchant to form the recess.

407129

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