Method for producing a monocrystalline...

C - Chemistry – Metallurgy – 30 – B

Patent

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C30B 9/00 (2006.01) C30B 9/12 (2006.01) C30B 29/46 (2006.01) C30B 29/60 (2006.01) H01L 31/032 (2006.01)

Patent

CA 2550921

The invention relates to a method for producing a powder consisting of a Cu(In,Ga)Se2 compound, said method comprising the following steps: Cu and In and/or Cu and Ga are alloyed to form a CuIn and/or CuGa alloy with a substoichiometric part of Cu; a powder consisting of said CuIn and/or CuGa alloy is produced; Se and either KI or NaI are added to the powder; the mixture is heated until a melted mass is formed, in which the Cu(In,Ga)Se2 compound recrystallises, and the powder grains to be produced simultaneously grow; and the melted mass is cooled in order to interrupt the growth of the grains. The invention also relates to a monograin membrane solar cell containing a back contact, a monograin membrane, at least one semiconductor layer, and a front contact, said solar cell being characterised in that the monograin membrane contains a powder produced by the inventive method.

L'invention concerne un procédé servant à produire une poudre constituée d'un composé Cu(In,Ga)Se¿2?. Le procédé selon l'invention consiste à : - allier Cu et In et/ou Cu et Ga en un alliage CuIn et/ou CuGa ayant une part sous-stoechiométrique en Cu ; - produire une poudre constituée de cet alliage CuIn et/ou CuGa ; - ajouter à la poudre Se ainsi que soit KI soit NaI ; - chauffer le mélange jusqu'à obtenir une masse fondue dans laquelle le composé Cu(In,Ga)Se¿2? recristallise, avec croissance simultanée des grains de poudre à produire et - refroidir la masse fondue pour interrompre la croissance des grains. L'invention concerne également une cellule solaire à membrane monograin, qui contient un contact de repos, une membrane monograin, au moins une couche semi-conductrice et un contact de travail et qui est caractérisée en ce que la membrane monograin contient une poudre produite selon le procédé de l'invention.

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