Method for producing a semi-conductor body comprising...

Details Method for producing a semi-conductor body comprising... Method for producing a semi-conductor body comprising...

C - Chemistry, Metallurgy

30

B

31/160, 148/2.6

C30B 35/00 (2006.01) C04B 35/565 (2006.01) H01B 1/00 (2006.01)

Patent

CA 1043666

ABSTRACT OF THE DISCLOSURE A method for producing a semi-conductor body is disclosed. The batch for the body is silicon carbide, alumina and an oxide, carbonate, or hydroxide of calcium, magnesium or a mixture of the two. The batch is first pressed into shape. The shape is then fired in air to a temperature from about 2050 to about 2100°F for a time sufficiently long to cause the oxidation of a predetermined portion of the silicon carbide to silicon dioxide. The resulting body is then fired in an inert gas atmosphere to a temperature from about 2450 to 2750°F, and for a time sufficiently long to produce a semi- conductor body having an apparent porosity of from 10% to 20%. An impreg- nation step is also disclosed to achieve the specified apparent porosity. The semi-conductor body of the invention is useful in the manufacture of jet engine igniters.

185374

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