Method for producing a semiconductor component having a...

Details Method for producing a semiconductor component having a... Method for producing a semiconductor component having a...

H - Electricity

01

L

H01L 21/4763 (2006.01) H01L 29/43 (2006.01) H01L 29/772 (2006.01)

Patent

CA 2579325

A method for producing a semiconductor component, and a semiconductor component, having a metallic gate electrode deposited onto a semiconductor layer, with the gate electrode having a gate foot and a gate head. The component is produced by depositing a first layer of aluminum on the semiconductor layer, depositing a second layer of a second metal on the first layer, depositing at least one additional layer (G3) of an additional metal, different from the second metal, on the second layer, and carrying out a temperature treatment at elevated temperature.

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