C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
117/81, 148/2.1
C30B 23/00 (2006.01) C23C 14/02 (2006.01) C23C 14/24 (2006.01) H01L 21/203 (2006.01)
Patent
CA 1066174
ABSTRACT OF THE DISCLOSURE: A method of growing compound thin films of single atomic layers by sequential surface reaction steps between the single elements of the compound and a body surface. The method of the invention comprises subjecting in each reaction step the body surface to interaction with atoms of a single element in vapour phase at a partial pressure sufficiently high and over a period of time sufficiently long to cause collisions on the surface of the single element atoms in excess of the number of atoms in one single atomic layer of the surface, and maintaining the surface at a temperature sufficiently high for the surface reaction to occur and too high for the reacting vapour to condense itself on the surface. The invention enables one to form a single atomic layer by a means which is self-determining and which does not permit the formation of layers of greater thickness.
240388
Antson Jorma
Suntola Tuomo
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