Method for producing crack-free polycrystalline silicon rods

Details Method for producing crack-free polycrystalline silicon rods Method for producing crack-free polycrystalline silicon rods

C - Chemistry, Metallurgy

30

B

C30B 28/12 (2006.01) C01B 33/021 (2006.01)

Patent

CA 2731009

The invention relates to a method for producing polycrystalline silicon rods by deposition from the gas phase on a thin rod, wherein one or a plurality of disks consisting of a material having a lower electrical resistivity than the polycrystalline silicon under deposition conditions are introduced above the electrodes and/or below the bridge of the rod pair.

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