C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/26 (2006.01) C23C 16/01 (2006.01) C23C 16/27 (2006.01) C23C 16/46 (2006.01) C23C 16/54 (2006.01)
Patent
CA 2082729
GEMAT 9/60-SD-579 ABSTRACT OF THE DISCLOSURE Chemical vapor deposition method for producing a diamond film substantially free of thermal stress-induced cracks in which diamond growth occurs on both sides of a thin substrate so that two diamond coatings with identical opposing tensile forces are formed on each side of the substrate at a thickness greater than the thickness of the thin substrate.
Knemeyer Friedel S.
Slutz David E.
Company General Electric
Craig Wilson And Company
Knemeyer Friedel S.
Slutz David E.
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