C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
25/142
C01B 21/068 (2006.01) C01B 33/00 (2006.01)
Patent
CA 1122385
METHOD FOR PRODUCING DENSE SILICON NITRIDE CONTAINING YTTRIUM OXIDE AND ALUMINUM OXIDE AND HAVING HIGH TEMPERATURE STRENGTH AND OXIDATION RESISTANCE ABSTRACT OF THE DISCLOSURE The addition of controlled amounts of A1203 to high purity Si3N4 powder (containing less then 0.1 weight percent cation impurities and containing Y203 as a densifying additive) enables shorter sintering times to achieve polycrystalline Si3N4 bodies having densities approaching theoretical density, while a post- sintering crystallization heat treatment results in strengths at high temperatures not otherwise obtainable in the presence of A1203. Resulting Si3N4 bodies are useful as engine parts and components or a regenerator or recuperator structures for waste heat recovery. In addition, such Si3N4 bodies containing A1203 exhibit good oxidation resistance.
329449
Quackenbush Carr L.w.
Smith J. Thomas
Gte Laboratories Incorporated
R. William Wray & Associates
LandOfFree
Method for producing dense silicon nitride containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing dense silicon nitride containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing dense silicon nitride containing... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1133731