Method for producing high-purity silicon carbide from...

C - Chemistry – Metallurgy – 01 – B

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C01B 31/36 (2006.01) C01B 33/021 (2006.01) C04B 35/565 (2006.01)

Patent

CA 2739026

The invention relates to a method for producing silicon carbide through reaction of silicon oxide and a carbon source comprising a hydrocarbon at high temperature, in particular to a technical method for producing silicon carbide or for producing compositions containing silicon carbide. The invention further relates to a high-purity silicon carbide, to compositions containing the same, to the use thereof as a catalyst and for the production of electrodes and other items.

L'invention porte sur un procédé de fabrication de carbure de silicium par réaction d'oxyde de silicium et d'une source de carbone comprenant un hydrate de carbone à haute température, en particulier un procédé technique de fabrication de carbure de silicium ou de fabrication de compositions contenant du carbure de silicium. L'invention porte en outre sur un carbure de silicium de haute pureté, sur des compositions le contenant, sur leur utilisation en tant que catalyseur, ainsi que lors de la préparation d'électrodes et d'autres articles.

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