Method for producing high purity starting material for...

Details Method for producing high purity starting material for... Method for producing high purity starting material for...

C - Chemistry, Metallurgy

01

B

23/325

C01B 33/02 (2006.01) C01B 33/025 (2006.01)

Patent

CA 1198879

ABSTRACT Highly purified starting materials for the production of silicon suitable for fabrication of solar cells are produced via the carbo-thermal process. A carbon-containing material with impurities therein, either by itself or admixed with glass bodies, which are attained from a melt of quartz sand and glass-forming additives formed into a fiber form and pulverized, is converted into a granulate form with the aid of a bonding agent, The resultant granulates are contacted with a hot inorganic acid, such as 3N HCl at about 90°C, to extract substantially all impurities from the granulates, which can be pellet or tablet form. The resultant purified pellets are then directly charged into an electrical arc furnace to yield solar-quality silicon. With this process, highly purified SiO2 and highly purified carbon are produced in a simple and cheap manner. The impurity level for boron, phosphorus and transition metal in these starting materials is less than about 1 ppm.

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