C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
148/25, 148/55
C23C 16/24 (2006.01) C21D 8/12 (2006.01) C23C 16/56 (2006.01) H01F 1/147 (2006.01)
Patent
CA 1323291
ABSTRACT The present invention relates to a method for producing high silicon steel strip in a continuously treating line through a chemical vapor deposition, wherein the steel strip is treated continuously with siliconization at temperatures between 1023 and 1200°C by chemical vapor deposition in a non-oxidizing gas atmosphere containing SiCl4 between 5 and 35% in molar fraction, and subsequently performed with a diffusion treatment in a non-oxidizing gas atmosphere not containing SiCl4 for diffusing Si uniformly within the steel strip, and coiled after cooling. If a steel strip coated with an insulating film is required, the insulating film can be applied after the diffusion treatment - cooling, and coiled after a baking treatment.
579756
Abe Masahiro
Fukuda Shuzo
Okada Kazuhisa
Takada Yoshikazu
Tanaka Yasushi
Nkk Corporation
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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