C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.5
C30B 31/00 (2006.01) H01L 21/285 (2006.01)
Patent
CA 1305398
RD-16,737 METHOD FOR PRODUCING HIGH YIELD ELECTRICAL CONTACTS TO N+ AMORPHOUS SILICON Abstract of the Invention Electrical contact to doped amorphous silicon material is enhanced by depositing a thin layer of molyb- denum on the amorphous silicon surface and subsequently removing it. This treatment is found to permanently alter the silicon surface so as to facilitate and improve elec- trical contact to the silicon material by subsequently deposited metallization layers for source and drain elec- trode attachment. The layer of molybdenum which is deposi- ted and removed need only be approximately 50 nanometers in thickness to produce desirable results. The method is particularly useful in the fabrication of thin film, inver- ted, amorphous silicon field effect transistors. Further- more, such devices are particularly useful in the fabrica- tion of liquid crystal display systems employing such field effect transistors in matrix addressed arrays used for switching individually selected pixel elements.
562399
Company General Electric
Craig Wilson And Company
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