Method for producing planar trenches

Details Method for producing planar trenches Method for producing planar trenches

H - Electricity

01

L

H01L 21/763 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2285627

Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon 20 or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.

La présente invention concerne un procédé d'amélioration de la topographie sur des structures de sillon dans lesquelles l'apport d'un matériau polysemiconducteur supplémentaire, par exemple du polysilicium 20, du nitrate ou un oxyde, dans les régions des bords de sillon, et si nécessaire, l'oxydation ultérieure du matériau supplémentaire, empêchent l'apparition de régions de tension mécanique élevée.

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