Method for producing polycrystalline silicon

C - Chemistry – Metallurgy – 01 – B

Patent

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C01B 33/033 (2006.01)

Patent

CA 2684973

The invention relates to metallurgy and/or chemistry, in particular to methods and devices for producing a silicon tetrafluoride gas and polycrystalline silicon from said silicon tetrafluoride gas. The method for producing silicon tetrafluoride from a hydrosilicofluoric acid solution consists in forming, washing, drying and decomposing the acid extract and in bubbling a nonseparated silicon tetrafluoride and hydrogen fluoride flow through silicon dioxide. The silicon producing method consists in interacting the silicon tetrafluoride gas with magnesium vapour and in subsequently separating a final product. Said invention makes it possible to produce a highly pure silicon, to increase the final produce yield, to improve the environmental friendliness of the production, to simplify the silicon production process and to reduce the production cost of the final product.

L'invention concerne le domaine de la métallurgie et/ou de la chimie et notamment des procédés de fabrication de tétrafluorure de silicium gazeux et de silicium polycristallin à partir de tétrafluorure de silicium gazeux. Le procédé de fabrication de tétrafluorure de silicium à partir d'une solution d'acide fluorosilicique consiste à former un extrait d'acide, de nettoyer ledit extrait, de le sécher, de le décomposer, d'effectuer le barbotage du flux gazeux non différencié de tétrafluorure de silicium et d'hydrogène fluoré en passant par le dioxyde de silicium. Le procédé de production de silicium comprend l'interaction du tétrafluorure de silicium gazeux avec les vapeurs de magnésium puis la séparation du produit fini. L'invention pemret d'obtenir du silicium présentant un degré de pureté élevé, d'augmenter le rendement en termes de produit fini, de rendre le processus de fabrication plus respectueux de l'environnement et de simplifier sa technologie ainsi que de réduire le coût du produit fini.

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