Method for producing semiconductor grade silicon

Details Method for producing semiconductor grade silicon Method for producing semiconductor grade silicon

C - Chemistry, Metallurgy

30

B

148/2.3

C30B 29/60 (2006.01) C01B 33/02 (2006.01) C30B 25/00 (2006.01) C30B 29/06 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1178180

C19-21-0291A IMPROVED METHOD FOR PRODUCING SEMICONDUCTOR GRADE SILICON Abstract of the Disclosure An improved method of producing high purity silicon wherein the deposition rate for depositing silicon upon hot silicon carrier bodies through pyrolytic decomposition of silicon halide-hydrogen is significantly enhanced without increasing formation of free silicon particulate matter or silicon halide polymer coatings on reactor walls, the improvement resulting from the introduction of controlled amounts of less than 10% by weight of silane into the silicon halide-hydrogen reaction gas, the improved silicon deposition rate increasing substantially beyond the rate attributable to the stoichiometric addition amount of silane. Inventor: Henry W. Gutsche

382630

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