H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/51
H01L 21/324 (2006.01) H01S 3/19 (1980.01)
Patent
CA 1043895
ABSTRACT OF THE DISCLOSURE Disclosure is made of a method for producing a semicon- ductor array of light-emitting elements, whereby a mask is first applied onto an n-layer of an epitaxial structure consisting of a substrate GaAs of the p+-type of conductivity with layers Ga1-xAlxAs of the p-type and Ga1-yAlyAs of the n-type applied successively onto it, which layers from a light-emitting p-n junction. The mask is produced by applying a photoresist layer onto the n-layer with subsequent exposure and etching. This is followed by introducing into the n-type layer, through said mask, an acceptor addition by means of ion implantation. After this the photoresist layer is removed, and a layer of SiO2 is applied onto the uncovered n-layer. After this diffusion heat treatment is carried out for a time and at a temperature sufficient to pro- duce in the n-layer regions of the p-type conductivity whose depth is at least equal to the thickness of the n-layer.
228607
Akimov Jury S.
Kurinny Vladimir I.
Sushkov Valery P.
Akimov Jury S.
Kurinny Vladimir I.
Sushkov Valery P.
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