Method for producing semiconductor single crystal wafer and...

Details Method for producing semiconductor single crystal wafer and... Method for producing semiconductor single crystal wafer and...

H - Electricity

01

L

H01L 21/304 (2006.01) B23K 26/40 (2006.01) B28D 1/22 (2006.01) B28D 5/00 (2006.01)

Patent

CA 2508733

A method for producing semiconductor single crystal wafer is characterized in that a plurality of semiconductor single crystal wafers (2a-2d) having a relatively small diameter that is required by prospective consumers are cut out of a semiconductor single crystal wafer (1a-1d) having a relatively large diameter. This method has a secondary advantage in that even when a semiconductor singly crystal wafer of large-diameter partially has a defect, some semiconductor single crystal wafers of small-diameter can be cut out for shipment from the portion other than the region with the defect.

Cette invention se rapporte à un procédé pour produire une plaquette de monocristal de semi-conducteur, qui se caractérise en ce que plusieurs plaquettes de monocristal de semi-conducteur (2a-2d) ayant un diamètre relativement petite tel que requis par les clients potentiels peuvent être découpées dans une plaquette de monocristal de semi-conducteur (1a-1d) ayant un diamètre relativement grand. Ce procédé a un avantage secondaire, à savoir que, même lorsqu'une plaquette de monocristal de semi-conducteur de grand diamètre est partiellement affectée d'un défaut, certaines plaquettes de monocristal de semi-conducteur de petit diamètre peuvent être découpées et extraites de la partie autre que celle présentant le défaut.

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