C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 33/035 (2006.01)
Patent
CA 2418703
A production method of silicon which comprises the steps of bringing a silane into contact with a surface of a substrate so as to cause silicon to be deposited while the surface of the substrate is heated to and kept at a temperature lower than the melting point of the silicon, and raising the temperature of the surface of the substrate so as to cause a portion or all of the deposited silicon to melt and drop from the surface of the substrate and be recovered.
Procédé de fabrication de silicium, qui comporte les étapes consistant à : déposer le silicium en mettant des silanes en contact avec la surface d'un matériau de base pendant que la surface du matériau de base est chauffée et maintenue à une température inférieure au point de fusion du silicium ; et augmenter la température de la surface du matériau de base pour faire fondre tout ou partie du silicium déposé, de manière à le faire tomber de ladite surface à des fins de collecte.
Oda Hiroyuki
Wakamatsu Satoru
Smart & Biggar
Tokuyama Corporation
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