H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/304 (2006.01)
Patent
CA 2521513
A method for producing a single crystal semiconductor ingot is characterized in that a plurality of single crystal semiconductor ingots (2a) having a relatively small diameter that are required by prospective consumers are cut out of a single crystal semiconductor ingot (1a) having a relatively large diameter. This method has a secondary advantage in that even when the single crystal semiconductor ingot of large-diameter partially has a defect, some single crystal semiconductor ingots of small-diameter can be still cut out for use from the portion other than the region with the defect.
L'invention concerne un procédé de production d'un lingot de semi-conducteur monocristallin, caractérisé en ce que plusieurs lingots de semi-conducteur monocristallin (2a) de diamètre relativement faible, qui sont requis par des consommateurs potentiels, sont découpés en lingots de semi-conducteur monocristallin (1a) de diamètre relativement grand. L'un des avantages de ce procédé réside dans le fait que même lorsque le lingot de semi-conducteur monocristallin de grand diamètre présente partiellement un défaut, les lingots de semi-conducteur monocristallins peuvent encore être découpés en vue d'utiliser la portion autre que la zone présentant le défaut.
Matsui Yasuyuki
Otsuki Makoto
Marks & Clerk
Sumitomo Electric Industries Ltd.
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