Method for producting high-density sintered silicon carbide...

Details Method for producting high-density sintered silicon carbide... Method for producting high-density sintered silicon carbide...

C - Chemistry, Metallurgy

04

B

25/128

C04B 35/56 (2006.01) C04B 35/565 (2006.01)

Patent

CA 1281173

ABSTRACT OF THE DISCLOSURE: A method for producing high density sintered silicon carbide articles useful as wear-resistant materials, corrosion-resistant materials and high- temperature structural materials which comprises mixing powdery silicon carbide composed mainly of .alpha.-phase silicon carbide, a boron compound of from about 0.05 to about 0.15 wt.%, as converted to boron, based thereon and a carbonizable organic substance so that the total of combinable carbon content of the powdery silicon carbide and combinable carbon content of the carbonizable organic substance is from about 4 to about 8 wt.%, molding the resulting mixture, and subjecting the molded product to heating at a temperature of from about 1,000°C to about 2,000°C in a vacuum and then sintering at a temperature of about 2,300°C or less in an inert atmosphere to obtain a sintered silicon carbide article having a sintered density of about 90% or more of the theoretical density.

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