Method for production of compound semiconductor devices

Details Method for production of compound semiconductor devices Method for production of compound semiconductor devices

H - Electricity

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356/155

H01L 29/40 (2006.01) H01L 21/768 (2006.01) H01L 21/8252 (2006.01) H01L 23/532 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1277779

ABSTRACT OF DISCLOSURE This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices. This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching. Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.

562920

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