Method for production of soi substrate by pasting and soi...

Details Method for production of soi substrate by pasting and soi... Method for production of soi substrate by pasting and soi...

H - Electricity

01

L

H01L 29/26 (2006.01) H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2202003

This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO2 surface and a second substrate possessing a Si surface on the SiO2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.

Cette invention résout le problème de création d'espaces vides sur le pourtour d'un support de silicium sur isolant (SOI) appliqué en pâte, problème limitant le nombre de dispositifs qu'il est possible d'en tirer. Il s'agit d'une méthode de fabrication de support SOI obtenu en appliquant en pâte un premier support de Si ayant une surface de SiO2 et un deuxième support ayant une surface de Si sur la surface de SiO2 et la surface de Si, méthode qui comporte également une étape consistant à laver la surface de Si du deuxième support de Si pour rendre hydrophobe cette surface de Si avant que le premier support de Si et le deuxième support de Si soient appliqués en pâte ensemble.

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