Method for purification of silicon, silicon, and solar cell

C - Chemistry – Metallurgy – 01 – B

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C01B 33/037 (2006.01)

Patent

CA 2667999

Disclosed is a method for the purification of silicon, which can reduce the content of boron (that is contained as an impurity) in the purification of metal silicon to produce silicon suitable for use in a solar cell. Specifically disclosed is a method for the purification of silicon, which comprises the steps of providing a mixture having molten silicon and a molten salt co-present therein, introducing a gas containing a chlorine atom into the mixture, and introducing water vapor together with a gas containing a chlorine atom. The gas containing a chlorine atom is preferably chlorine gas or silicon tetrachloride. The molten salt is preferably a mixture of at least silicon dioxide and calcium oxide and may contain calcium fluoride.

L'invention concerne un procédé pour la purification du silicium, qui est susceptible de réduire le contenu en bore (qui est contenu en tant qu'impureté) dans la purification du silicium métallique, afin de produire un silicium adapté pour être utilisé dans une cellule solaire. L'invention concerne de manière spécifique un procédé pour la purification du silicium, qui comprend les étapes consistant à fournir un mélange dans lequel du silicium fondu et un sel fondu sont co-présents, introduire un gaz contenant un atome de chlore dans le mélange, et introduire de la vapeur d'eau en même temps que le gaz contenant un atome de chlore. Le gaz contenant un atome de chlore est de préférence du chlore gazeux ou du tétrachlorure de silicium. Le sel fondu est de préférence un mélange contenant au moins du dioxyde de silicium et de l'oxyde de calcium, et peut contenir du fluorure de calcium.

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