H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/12, 88/97.6
H01S 3/06 (2006.01) G02F 1/035 (2006.01) H01S 5/50 (2006.01) H01S 5/028 (2006.01) H01S 5/16 (2006.01)
Patent
CA 2017732
89-3-614 METHOD FOR REDUCING FACET REFLECTIVITIES OF SEMICONDUCTOR LIGHT SOURCES AND DEVICE THEREOF ABSTRACT A novel method for reducing the facet reflectivities of semiconductor light sources and amplifiers concerns the use of a bulk (non-waveguiding) index-matched regrown end cap region at both of the major facet surfaces of the amplifier. The amplifier has a tilted stripe geometry which, in combination with the end cap regions, enable the amplifier to reproducibly achieve facet reflectivities of less than 10-5 while avoiding a facet coating step. The improved optical amplifier is more amenable to mass production and less sensitive to both wavelength and polarization.
Eichen Elliot
Rideout William C.
Eichen Elliot
Gte Laboratories Incorporated
R. William Wray & Associates
Rideout William C.
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