G - Physics – 03 – F
Patent
G - Physics
03
F
356/147
G03F 7/09 (2006.01)
Patent
CA 2008132
ABSTRACT OF THE DISCLOSURE For reducing reflection-induced fluctuations of structure size in a cover layer composed, for example, of photoresist in the manufacture of integrated circuits in a substrate composed, for example, of silicon by optical lithography, an antireflection layer is applied under the cover layer. In one embodiment of the antireflection layer, it is continuously composed of one material, for example Si3N4, that has a refractive index that is higher than that of the cover layer and has a thickness that corresponds to one quarter of the wavelength of the light employed for exposure. In a further embodiment of the antireflection layer, it is composed of a first layer, of, for example, SiOxNy and of a second layer of, for example, SiO2 whereby the first layer lying under the cover layer has a higher refractive index than the cover layer, the second layer lying under the first layer has a lower refractive index than the first layer and the substrate lying under the second layer has a higher refractive index than the substrate.
Mader Leonhard
Nolscher Christoph
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
Mader Leonhard
Nolscher Christoph
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