Method for reducing the surface area of silicon dioxide

Details Method for reducing the surface area of silicon dioxide Method for reducing the surface area of silicon dioxide

C - Chemistry, Metallurgy

09

C

C09C 1/30 (2006.01) C01B 33/18 (2006.01)

Patent

CA 2406377

The invention relates to a method for reducing the surface of silicon dioxide. The method is characterised in that silicon dioxide is introduced into an electromagnetic shielding device selected from the following: an aluminium/magnesium metal shielding device and a hypomagnetic chamber consisting of permalloy steel; and incubated for a period of at least 3, preferably at least 6 hours.

L'invention concerne un procédé pour diminuer la surface du dioxyde de silicium, se caractérisant en ce que le dioxyde de silicium est mis à incuber pour une durée d'au moins 3 heures, et de préférence d'au moins 6 heures, dans un dispositif de protection électromagnétique sélectionné à partir d'un dispositif de protection métallique aluminium/magnésium et d'une chambre hypomagnétique en acier type permalloy.

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