Method for regulating concentration and distribution of...

C - Chemistry – Metallurgy – 30 – B

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148/1.5

C30B 15/30 (2006.01) C30B 15/00 (2006.01)

Patent

CA 1191075

METHOD FOR REGULATING CONCENTRATION AND DISTRIBUTION OF OXYGEN IN CZOCHRALSKI GROWN SILICON Abstract of the Disclosure Oxygen concentration and distribution within silicon crystal rods drawn according to the Czochralski process from silicon melt contained in a silica crucible, are regulated through variation of both the magnitude and relative sense of direction of seed and crucible rotation rates with uniform distribution of the oxygen being accom- plished by increasing crucible rotation rate to preselected values as a function of crystal rod growth and melt con- sumption.

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